Development of silicon wafer bonding for GaN/sapphire epi-structure via a eutectic technique
碩士 === 國立中興大學 === 精密工程學系所 === 97 === The luminous efficiency of LED is depended on the heat dissipation properties of wafer substrate. Recently, many researches try to apply highly thermal conductivity wafer material on LED structure by wafer bonding and laser lift-off process. Wafer bonding is cons...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/18891803694724363312 |