Investigations of Gate Induced Drain Leakage (GIDL) and Bias Temperature Instability (BTI) on LTPS TFTs and Hf-based High-k CMOSFETs
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 97 === In this thesis, the trapping characteristics of positive bias temperature instability (PBTI) on a high-k/metal gate n-type metal oxide semiconductor field effect transistor (nMOSFET) have been firstly investigated with a complementary multi-pulse technique (...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70836009323483888143 |