Investigation of Uniaxial Strain Technology on the Characteristics of Nanoscale CMOS and Bipolar Transistors
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 97 === In this dissertation, we investigate the effects of uniaixal strain on the characteristics of nanoscale CMOS and BiCMOS devices. By utilizing a 4-point mechanical bending technique, we explore the accurate strain responses of device characteristics under var...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59162889596780467934 |