Thermal Effects on the GaN-based Vertical Light Emitting Diodes with Electroplating Cu Substrate
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 97 === Due to the similar coefficients of thermal expansion (CTE) of molybdenum (Mo) and GaN, Mo was introduced to GaN and copper substrate to reduce the CTE mismatch. In this work, the molybdenum/copper layers were deposited about 4 μm as buffer layer between GaN...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65401183485888314070 |