Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 97 === With continual downscaling, high-k dielectrics have been proposed to replace the conventional SiO2 in modern microelectronic technology. However, ionic metal oxide natures of high-k materials result in several undesired instability issues when interfacing wi...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/93690943486319773985 |