Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 97 === With continual downscaling, high-k dielectrics have been proposed to replace the conventional SiO2 in modern microelectronic technology. However, ionic metal oxide natures of high-k materials result in several undesired instability issues when interfacing wi...
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ndltd-TW-097NCKU54280162016-05-04T04:17:32Z http://ndltd.ncl.edu.tw/handle/93690943486319773985 Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs 原子層沉積閘極堆疊先進金氧半場效電晶體之缺陷分佈與偏壓溫度不穩定性探討 Yu-Han Chen 陳昱翰 碩士 國立成功大學 微電子工程研究所碩博士班 97 With continual downscaling, high-k dielectrics have been proposed to replace the conventional SiO2 in modern microelectronic technology. However, ionic metal oxide natures of high-k materials result in several undesired instability issues when interfacing with silicon and integrated into CMOS processes, including charge trapping near the Si/dielectric interface and stress-induced device characteristic degradation, which have become urgent issues of high-k gated MOS devices. In this work, we introduce several measurement techniques based on the principle of charge pumping and flicker noise, and carry out a comprehensive analysis of defects within the CMOS gate stack. Applying these techniques we further examine how nitridation processes of ALD-HfSiON gated MOSFETs affect dielectric quality and electronic properties. Moreover, device bias temperature instability effect also being investigated by a constant voltage stress method, and realize that nitridation processes aggravate the reliability of p-type device. We conclude that plasma nitridation brings significant improvement of dielectric film quality and device reliability. This is due to the nitridation-induced trapping centers are mostly away from channel region, which alleviates the nitridation-induced device performance degradation. Shui-Jinn Wang 王水進 2009 學位論文 ; thesis 67 en_US |
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碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 97 === With continual downscaling, high-k dielectrics have been proposed to replace the conventional SiO2 in modern microelectronic technology. However, ionic metal oxide natures of high-k materials result in several undesired instability issues when interfacing with silicon and integrated into CMOS processes, including charge trapping near the Si/dielectric interface and stress-induced device characteristic degradation, which have become urgent issues of high-k gated MOS devices.
In this work, we introduce several measurement techniques based on the principle of charge pumping and flicker noise, and carry out a comprehensive analysis of defects within the CMOS gate stack. Applying these techniques we further examine how nitridation processes of ALD-HfSiON gated MOSFETs affect dielectric quality and electronic properties. Moreover, device bias temperature instability effect also being investigated by a constant voltage stress method, and realize that nitridation processes aggravate the reliability of p-type device. We conclude that plasma nitridation brings significant improvement of dielectric film quality and device reliability. This is due to the nitridation-induced trapping centers are mostly away from channel region, which alleviates the nitridation-induced device performance degradation.
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author2 |
Shui-Jinn Wang |
author_facet |
Shui-Jinn Wang Yu-Han Chen 陳昱翰 |
author |
Yu-Han Chen 陳昱翰 |
spellingShingle |
Yu-Han Chen 陳昱翰 Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs |
author_sort |
Yu-Han Chen |
title |
Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs |
title_short |
Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs |
title_full |
Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs |
title_fullStr |
Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs |
title_full_unstemmed |
Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs |
title_sort |
trap profile and bias temperature instability of ald-hfsion gate stacks in advanced mosfets |
publishDate |
2009 |
url |
http://ndltd.ncl.edu.tw/handle/93690943486319773985 |
work_keys_str_mv |
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