Hot Carrier Reliability in 12V High Voltage P-LDMOS Transistors
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 97 === In this thesis, the experiment mainly studies on the hot-carrier reliability of a 0.35 μm p-type lateral double diffusion metal oxide semiconductor field-effect-transistor. Base on the degradation of every parameter, we can analyze the mechanism causing the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30479749998144585484 |