Shrinking Gate Length by Oxidization Treatment in GaN/AlGaN/GaN HEMTs
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 97 === In this work, we preset an effective method of shrinking gate length by oxidization gate metal. The oxidization method’s advantages are fast, low cost, simple and effective increase devices performance. The gate metal process to be use metal different coeffi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96697322278637720041 |