Using Etching Technique to Enhance Light Extraction of AlGaInP-based LEDs by Geometric Shaping
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 97 === Recently, for the advance high brightness light emitting diodes (LEDs) has been obtained of epitaxy technology. The internal quantum efficiency of AlGaInP LED is up to 99% for a good quality crystalline, the external quantum efficiency is still very poor. Th...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/73517688165004162236 |