Characterizations of AlGaN/GaN Hetero-junction Photo Transistors
碩士 === 國立成功大學 === 光電科學與工程研究所 === 97 === In this study, AlGaN/GaN hetero-junction photo-transistors (HPTs) in detecting ultraviolet spectra have been fabricated and characterized. One of the HPTs features as low-temperature grown GaN (LT-GaN) insertion layer between based and emitter layers to reduce...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24160177308571077520 |