Study of Long Wavelength GaAs-based Resonant-cavtiy -enhanced Photodetectors with Multi-Quantum-Well Structures Grown by MOVPE
碩士 === 國立成功大學 === 光電科學與工程研究所 === 97 === In this thesis, the GaAsSb and InGaAs PIN photodetectors and the resonant cavity enhanced (RCE) PIN photodetectors were grown on GaAs substrates by metal-organic vapor phase epitaxy (MOVPE). In the conventional PIN photodetectors, we use the GaAsSb/GaAs quantu...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87078960435836088986 |