AlGaN/GaN High Electron Mobility Transistor for Sensor Application
碩士 === 國立成功大學 === 光電科學與工程研究所 === 97 === value of a solution under DC and AC biasing condition. For DC biasing condition, the channel resistance is found to decrease with reducing pH value under dark condition. The sensitivity is about 27.78 mV/pH when biasing the device with a constant current of 20...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13061740978817959467 |