MOCVD Growth of Non-polar GaN Based Light Emitting Devices and Functional Nanostructures
博士 === 國立交通大學 === 光電工程系所 === 97 === In this dissertation, the improvement in operation performance of III-V optoelectronic semiconductor light emitting devices and fundamental materials characteristics, which include invisible ultraviolet (UV) light-emitting diode (LED), red emission InGaN multiple...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90722757546173302817 |