Optical Properties of GaN QDs-Si3N4 and GaN QDs-SiOxNy Nanocomposite Thin Films Prepared by Target-attached Sputtering Method
碩士 === 國立交通大學 === 材料科學與工程系所 === 97 === This work prepares the nanocomposite thin films containing GaN quantum dots (QDs) in Si3N4 and SiOxNy dielectric matrices by using the target-attached sputtering method. Transmission electron microscopy （TEM） revealed the presence of GaN QDs in the both types o...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/32935944032314218442 |