Study of Low-k SiOF films deposited by PECVD for Deep Sub-IC Applications
博士 === 國立交通大學 === 材料科學與工程系所 === 97 === Fluorine-doped silicon oxide film (SiOF) has been found to be very effective in the reduction of dielectric constant and has been widely used in the manufacturing of deep-submicron integrated circuits (IC). However, the film stability of low-k fluorinated silic...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73623505356370535919 |