RF MOSFET Small Signal Equivalent Circuit Model Parameter Extraction for Various Biases and Geometries
碩士 === 國立交通大學 === 電子工程系所 === 97 === Small signal equivalent circuit models and the corresponding parameter extraction methods have been developed in this thesis for RF CMOS circuit simulation. Both two-port 3-terminal (3T) and four-port 4-terminal (4T) RF MOSFETs are covered in this work. The former...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52970935108922010651 |