Fabrication and Analysis of Novel Silicon Nanowire Devices and Their Applications
博士 === 國立交通大學 === 電子工程系所 === 97 === A novel field-effect transistor (FET) using sidewall-spacer polycrystalline silicon nanowire (poly-Si NW) channels is disclosed and investigated. This scheme features well-controlled dimension, accurate positioning and alignment of NWs as well as reliable source/d...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78321158586823698672 |