Fabrication and Characterizations of Inverse-T Double-Gated Devices with Poly-Si Nanowire Structure
碩士 === 國立交通大學 === 電子工程系所 === 97 === In this thesis, poly-Si nanowires(NWs) with independent double-gated(DG) configuration are fabricated by a simple sidewall spacer techniques. Gate-to-gate coupling effect facilitates the basic electrical characteristics and programming/erasing (P/E) characteristic...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/30213657042430794503 |