Investigation of interfacial defects in Ⅲ-nitride
博士 === 國立交通大學 === 電子物理系所 === 97 === The interfacial defects properties of GaN-based Schottky diodes have been investigated and fabricated by utilized current voltage temperature (I-V-T) and capacitance-frequency (C-f) methods. Surface states effects of metal-semiconductor-metal (MSM) photodetectors...
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/18485446726389059870 |