The optoelectronic characteristics on the InP nanowire field-effect transistors
碩士 === 國立交通大學 === 電子物理系所 === 97 === Indium phosphide (InP) nanowires with an average diameter of 20 nm were grown for the fabrication of two-probe devices by using the standard electron-beam lithography technique. Current-voltage (I-V) behaviors of the nanowire devices were measured at temperatures...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85364552939487000047 |