Optical Properties of GaAsSb Capped Type-II InAs Quantum Dots
碩士 === 國立交通大學 === 電子物理系所 === 97 === Optical properties of InAs quantum dots (QDs) capped with a thin GaAs1-xSbx layer were investigated by photoluminescence (PL). Both the power dependence of PL peak shift and the long decay time constants confirm the type-II band alignment at the InAs-GaAs1-xSbx...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/83730953551991782605 |