Study of The Reliability on Ultra-thin HfO2 and HfZrO Gate Dielectrics
碩士 === 國立交通大學 === 電子物理系所 === 97 === In this dissertation, the reliability issues for HfO2 and HfZrO MOSFETs with metal gate electrode has been successfully demonstrated. The oxide trap during BTI stress will dominate the characteristics for Hf-based gate dielectrics. For the same material HfO2, the...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/71546652365639544147 |