RANDOM-DOPANT-INDUCED CHARACTERISTIC VARIABILITY IN NANOSCALE CMOS LOGIC CIRCUITS
碩士 === 國立交通大學 === 電信工程系所 === 97 === With the continuous scaling of the semiconductor device dimension, modeling of device variability has become crucial for the accuracy of timing in circuits and systems. Unfortunately, due to the randomness of discrete dopant position in device, the fluctuations of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77978933683815878395 |