| Summary: | 碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備組 === 97 === In this thesis, clean solution of dulite APM（Ammonia (NH4OH ) and hydrogen Peroxide(H2O2) Mixtures）was evaluted to DT（Deep Trench）layer 、STI（Shallow Trench Isolation）layer of standard deep trench type DRAM（Dynamic Random Access Memory）and p-type bare wafer, three kinds of test wafer. Check item in DT and STI test wafer was particle
removed counts. Check item in bare wafer were wafer suface
roughness、Breakdown voltage （VBD）and Charge to breakdown（QBD）。
Clean solution experiment parameter were solution concentration,temperature and megasonic power. In those experiments, increased concentration and temperature were increased particle remove efficiency,but also damage wafer surface. Used test wafer C to confirm wafer surface damaged to choose one way to particle removed rate and surface roughness. In this thesis, decreased 4~5 times concentration, but particle remove counts not decreased very much, and in test wafer C could know wafer surface damage decreased. So used dulite APM to clean wafer were workable.
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