Effects of various electrodes on the sputtered Al2O3-based resistive switching memory devices
碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 97 === In this thesis, we introduce next-generation nonvolatile memory and focus on resistance random access memory (RRAM) research. The RRAM has bistable resistive switching characteristic which can exhibit two states of different resistance for logic level. Th...
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/01006985350889546111 |