Study on Physics Mechanism of Novel Nonvolatile SONOS-TFT Memory

碩士 === 國立交通大學 === 顯示科技研究所 === 97 === This thesis is based on the non-volatile memory SONOS application. The erasing mode was making the basis contact for the non-volatile memory SONOS devices. The carriers could obtain energy enough, and that might overcome the barrier height of oxide. Finally, the...

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Bibliographic Details
Main Authors: Chang, Geng-Wei, 張耿維
Other Authors: Tai, Ya-Hsiang
Format: Others
Language:en_US
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/71565212477537956778