High Reflective Ohmic Contact Layer for GaN-based Vertical Light Emitting Diode
博士 === 國立中央大學 === 化學工程與材料工程研究所 === 97 === Because of the breakthrough of the epitaxial growth technique in the past decade, the semiconductor solid-state lighting becomes the focus of new lighting source. GaN-based LED (light emitting diode) emitting in blue to green region is one of the topics tha...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49424440180404821769 |