ABCD: An Analyzing Bad-die/Changed-direction Diagram for Wafer Maps with Random Defect and Process Variation

• Main Authors: Chi-chen Lin, 林志成
• Other Authors: Jwu-E Chen
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/55844185321225434287

碩士 === 國立中央大學 === 電機工程研究所碩士在職專班 === 97 === In this thesis, we use the tornado model, which counts the total number of bad dice (NBD) and changed directions (NCD) on a wafer amp, to simulate and analyze wafer maps with random defects, process variation and both. It is shown that different sets of wafer maps generated by different types of sources are almost with the same tornado trend in the B-C diagram, where NBD is as x-axis and NCD is as y-axis. Then we analyze seven systematic errors defect pattern in wafer by wafer map analyzing model and get different distribution of defect pattern in B-C diagram. The wafer map analyzing model we set up in this research can indeed be a checker machine which can judge the source of defect in wafer and achieve the goals of cost down and improving the yield rate.