Fabrication and Study of Germanium Nanowire and Silicon Nanowire Transistors
碩士 === 國立中央大學 === 電機工程研究所 === 97 === In the past four decades, semiconductor industrials keep downscaling the size of MOSFETs in order to achieve the goals of high operation speed and high device density. However, the reduction of device size won’t last forever. When transistors shrink into or below...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/tyxce9 |