Germanium quantum dots formed by selectively oxidizing poly-SiGe nano-structure for single electron transistor application
碩士 === 國立中央大學 === 電機工程研究所 === 97 === Since the first concept of single electron transistor (SET) was proposed by Likharev et al. in Moscow University at 1985, SETs have attracted a lot of attention due to their high speed, ultralow power consumption, and unique quantum characteristics. In decades, m...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8arag2 |