Positioning and numbering Ge quantum dots for effective single-electrondevices
碩士 === 國立中央大學 === 電機工程研究所 === 97 === This thesis demonstrates that controlling the position and the number of Ge quantum dots (QDs) embedded in SiO2 or Si3N4 tunnel barriers in a self-organized manner is realized by oxidizing SiGe nano-trenches. A single Ge QD in the core or double QDs at the edges...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/p83p4p |