Photoresponses in polycrystalline silicon phototransistors incorporating germanium quantum dots in the gate dielectrics
碩士 === 國立中央大學 === 電機工程研究所 === 97 === This thesis demonstrates that polycrystalline silicon (poly-Si) thin-film transistors (TFTs) incorporating germanium (Ge) quantum dots (QDs) in the gate oxide were fabricated as efficient blue to near ultraviolet phototransistors for light detection and amplifica...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6nck4j |