Fabrication of Multilayer Ge Quantum-Dots MOS Photodetectors
碩士 === 國立中央大學 === 電機工程研究所 === 97 === In this thesis, multilayer Ge quantum-dots (QDs) have been fabricated and applied to photodetectors. Since the Si will be preferentially oxidized during the high-temperature annealing of SiGeO alloy and the segregated Ge atom will pile-up along the SiO2/SiON inte...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/45ygh7 |