GaN-Based Heterojunction Bipolar Transistors Study
博士 === 國立中央大學 === 電機工程研究所 === 97 === In the recent years, the GaN-based electronic devices have attracted attention for high power microwave application, such as AlGaN/GaN high electron mobility transistors (HEMT). However, it is difficult to fabricate working GaN-based HBTs due to the plasma-induce...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67844478084202531352 |