Photoresponses Study of Double-gated n- and p-type poly-Si Phototransistors Incorporating Germanium Quantum Dots in the Top-gate Dielectric.
碩士 === 國立中央大學 === 電機工程研究所 === 97 === The main purpose of this thesis is to investigate how to improve the photoresponse of poly-Si TFTs with Ge QDs using SPC of a-Si in channel fabrication. We have successfully demonstrated that the photoresponse of poly-Si TFTs could be enhanced by a factor of 2...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/nsb7a6 |