Single and double Ge-QD tunneling diodes fabrication and study
碩士 === 國立中央大學 === 電機工程研究所 === 97 === The main purpose of this thesis is to control the position and the numbers of Ge quantum dots (QDs) and the thickness of tunneling barrier by way of modulating the width and the length of oxidized SiGe nano-trenches and the materials adopted for spacer layers. Fo...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/tw79ca |