Investigation of GaN grown on nano-scale patterned GaN template
碩士 === 國立中央大學 === 光電科學研究所 === 97 === The characteristics of GaN-based materials grown on nano-scale patterned GaN template (NPGaN) using self-assemble nickel (Ni) nano-mask by Organometallic Vapor Phase Epitaxy (OMVPE) have been studied. The 3.3-µm-thick un-doped GaN (u-GaN) layer and 4.3-µm-thick n...
Main Authors: | Li-chuan Chang, 張力權 |
---|---|
Other Authors: | Cheng-Huang Kuo |
Format: | Others |
Language: | zh-TW |
Online Access: | http://ndltd.ncl.edu.tw/handle/85848793939120586715 |
Similar Items
-
MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
by: Haruka Matsuura, et al.
Published: (2019-04-01) -
Study of optical properties of InGaN/GaN MQWs grown on different GaN templates
by: Hsu, Yueh-Shan, et al.
Published: (2013) -
Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE
by: Yu-chih Chen, et al.
Published: (2009) -
Growth and characterization of Mg-doped GaN grown on GaN-template by molecular beam epitaxy
by: Tung-Nien Yang, et al.
Published: (2018) -
Investigation and Application of GaN Template
by: Chen, Yu-An, et al.
Published: (2015)