Investigation of improved heterojunction bipolar transistors
碩士 === 國立東華大學 === 光電工程研究所 === 97 === In this thesis, the studied heterojunction bipolar transistors (HBTs) are grown by low-pressure metamorphic organic chemical-vapor deposition (MOCVD). The InGaP/GaAs HBTs have larger current gain and smaller offset voltage than AlGaAs/GaAs heterojunction because...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52534524211280088705 |