Investigation of improved heterojunction bipolar transistors
碩士 === 國立東華大學 === 光電工程研究所 === 97 === In this thesis, the studied heterojunction bipolar transistors (HBTs) are grown by low-pressure metamorphic organic chemical-vapor deposition (MOCVD). The InGaP/GaAs HBTs have larger current gain and smaller offset voltage than AlGaAs/GaAs heterojunction because...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2009
|
Online Access: | http://ndltd.ncl.edu.tw/handle/52534524211280088705 |