Selective Etch Process of AlGaAs/InGaAs High-Electron Mobility Transistors
碩士 === 國立東華大學 === 材料科學與工程學系 === 97 === In this thesis, the high electron mobility transistors (HEMT) with AlGaAs/InGaAs structure by metalorganic chemical-vapor deposition (MOCVD) have been studied. The characteristic of two different devices are examined. A new structure by using double δ-doping th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/25668612863861860923 |