Investigation of InAlAs/InGaAs/GaAs Metamorphic Heterostructure Field Effect Transistors
碩士 === 國立東華大學 === 材料科學與工程學系 === 97 === In this thesis, δ-doped InxAl1-xAs/InxGa1-xAs/GaAs metamorphic heterostructure field effect transistors (MHFETs) with InxGa1-xAs channel to effectively relieve the impact-ionization effects has been successfully grown by molecular beam epitaxy (MBE). Improved b...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19869974198357381533 |