Investigation of AlInAs/GaInAs High Electron Mobility and Doped-Channel Field-Effect Transistors
碩士 === 國立高雄師範大學 === 物理學系 === 97 === In this thesis, the ternary compound semiconductor devices, i.e., AlInAs/GaInAs high electron mobility transistor (HEMT) and doped-channel field-effect transistor (DCFET) are analyzed and compared. The electron distribution DC and the high-frequency characteristic...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Language: | en_US |
| Published: |
2009
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/389v57 |