| Summary: | 碩士 === 國立屏東科技大學 === 材料工程所 === 97 === In this study, the microcrystalline silicon thin films prepared by the high density plasma chemical vapor deposition, can be used to improve the electric property for application in the thin film transistors and solar cell devices.
This experiment is designed by the different process parameters such as the different hydrogen (H2) gas flows and the different radio frequencies (RF) power. We also discussed the effects of the different process parameters on the microcrystalline silicon thin films. The structural, optical and electrical properties of the microcrystalline silicon thin films are identified by Raman spectrum, X-Ray diffraction, FTIR, Hall measurement, SEM and UV-visible etc..
From the results, it can be observed the crystallinity factor of µc-Si:H films at room substrate temperature was about 30%. Additionally, the relative crystallinity, mobility and the range of absorption are increased as the increase of the RF power. In this study, the best value of mobility is almost reach to 40 cm2/V-s, and the σphoto/σdark can be larger than 101.
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