Optical Characterizations for Metamorphic Quantum Dots Grown on GaAs substrate
碩士 === 國立中山大學 === 光電工程學系研究所 === 97 === Metamorphic multiple quantum dots (QDs) on GaAs substrates were grown by molecular beam epitaxy (MBE). The metamorphic layers including In0.15Ga0.85As and AlAs were in-situ annealed at high temperature (T=800oC) to reduce the dislocations. InGaAs QDs were then...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/f3ypyv |