Growth of free-standing non-polar GaN on LiAlO2 substrates by Hydride Vapor Phase Epitaxy
碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 97 === A hydride vapor phase epitaxy, (HVPE) was designed to grow nonpolar GaN. LiAlO2 single crystal grown by Czochralski (Cz) method in our lab was used as the substrate. The X-ray diffraction and scanning electron microscopy were used to study the GaN epilayer’s...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/wwf8c6 |