Determination of infrared transitions by photoreflectance for (0001) InN film on sapphire
碩士 === 國立中山大學 === 物理學系研究所 === 97 === The excitonic transitions of a c-oriented wurtzite InN thin film, grown on sapphire substrate by plasma-assisted molecular beam epitaxy, were studied by photoreflectance (PR) measurement from 10 to 120 K. The energies of the observed features have a tendency to d...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/q77739 |