The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain
碩士 === 國立中山大學 === 物理學系研究所 === 97 === Abstract The tendency to manufacture of semiconductor is to minimize the size of device. With the size was minimized, the number of transistor on the chip was maximized at the same time .However, when the drift region of Power-MOSFET is shorter will result in th...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/qtz854 |