Investigate Short-Channel Effects and Thermal Behavior of a Novel Pseudo Tri-Gate Vertical Ultrathin MOSFETs with Source/Drain Tie
碩士 === 國立中山大學 === 電機工程學系研究所 === 97 === This paper investigates the device behavior of a novel pseudo tri-gate ultrathin channel vertical MOSFET with source/drain tie (S/D tie), the PTG-SDT VMOS. The S/D tie (SDT) of this novel device circumvents short channel effect (SCEs). A double- surround-gate (...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4542qm |