Characterization of Sulfur、Fluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide
碩士 === 國立中山大學 === 電機工程學系研究所 === 97 === Due to the high electron mobility compared with Si, III-V compound semiconductors (GaAs) has been applied widely for high-speed devices. The titanium oxide (TiO2) has not only has high dielectric constant but has well lattice match with GaAs substrate. Therefor...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/2rx23u |