The Small Signal and Nonlinear Models of InGaAs pseudomorphic High Electron Mobility Transistors
碩士 === 國立中山大學 === 電機工程學系研究所 === 97 === Recent advances in wireless communication industry, radio- frequency circuits are developing fast. For power amplifiers, the active circuits are mainly composed of transistors where withstand high voltage and current. The excellent transistors characteristic re...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/7zjzte |