Fabrications and Characteristics of Nonvolatile Memory Devices with Sn Nanocrystals Embedded in MIS Structure
碩士 === 國立中山大學 === 機械與機電工程學系研究所 === 97 === Current requirements of nonvolatile memory (NVM) are the high density cells, low-power consumption, high-speed operation and good reliability for the scaling down devices. However, all of the charges stored in the floating gate will leak into the substrate i...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/bcapzu |